IXTH60N20L2 IXYS, IXTH60N20L2 Datasheet - Page 5

• Manufacturer Part Number: IXTH60N20L2
• Description: MOSFET N-CH 200V 60A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH60N20L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 255nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): 10500
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): 330
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1,000
100
10
1
1
Fig. 13. Forward-Bias Safe Operating Area
R DS(on) Limit
10
@ T
V
DS
C
- Volts
= 25ºC
100
DC
25µs
100µs
1ms
100ms
10ms
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
1,000
1,000
100
10
1
1
Fig. 14. Forward-Bias Safe Operating Area
IXTT60N20L2 IXTQ60N20L2
R DS(on) Limit
10
@ T
V
DS
C
- Volts
= 75ºC
IXTH60N20L2
100
DC
IXYS REF: T_60N20L2(8R)09-29-09
25µs
100µs
1ms
10ms
100ms
T
T
Single Pulse
J
C
= 150ºC
= 75ºC
1,000