IXFH80N10 IXYS, IXFH80N10 Datasheet
IXFH80N10
Manufacturer Part Number
IXFH80N10
Description
MOSFET N-CH 100V 80A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH80N10.pdf
(2 pages)
Specifications of IXFH80N10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0125 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.0125
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH80N10
Manufacturer:
IXYS
Quantity:
1 000
Company:
Part Number:
IXFH80N10Q
Manufacturer:
IXYS
Quantity:
188
Part Number:
IXFH80N10Q
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
HiPerFET
Power MOSFETs
© 2000 IXYS All rights reserved
L(RMS)
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
Lead current limit
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
C
C
C
C
J
C
GS
GS
GS
GS
J
J
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
, di/dt 100 A/ s, V
GS
DSS
, I
D
D
DC
D
= 1 mA
= 4 mA
, V
= 0.5 I
300 s, duty cycle d
G
= 2
DS
= 0
D25
GS
= 1 M
DD
(T
T
T
J
J
J
V
= 25 C, unless otherwise specified)
DSS
= 25 C
= 125 C
,
JM
2 %
100
min.
2.0
IXFH 80N10
IXFT 80N10
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
320
300
100
100
300
150
2.5
80
75
80
50
20
30
5
6
4
12.5
100
max.
4.0
50
1
V/ns
mJ
m
mA
W
nA
C
C
C
C
V
V
V
V
A
A
A
A
g
g
V
V
J
A
S = Source TAB = Drain
Features
l
l
l
l
Advantages
l
l
l
TO-247 AD (IXFH)
TO-268 ( IXFT) Case Style
G = Gate
V
I
R
t
D25
rr
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
200 ns
DS (on)
= 12.5 m
= 100 V
=
D
G
= Drain
80
S
98739 (8/00)
A
(TAB)
(TAB)
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IXFH80N10 Summary of contents
Page 1
... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2000 IXYS All rights reserved IXFH 80N10 IXFT 80N10 Maximum Ratings 100 = 1 M 100 320 2 DSS 300 -55 to +150 150 -55 to +150 300 1.13/10 Nm/lb.in Characteristic Values ( unless otherwise specified) J min ...
Page 2
... Pulse test, t 300 s, duty cycle 25A, -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 35 55 4800 ...