IXFV30N60P IXYS, IXFV30N60P Datasheet - Page 5

• Manufacturer Part Number: IXFV30N60P
• Description: MOSFET N-CH 600V 30A PLUS220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFV30N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: PLUS-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohms
• Forward Transconductance Gfs (max / Min): 27 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: PLUS220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Package Outline Drawings
TO-247 AD Outline
TO-268 (IXTT) Outline
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
3 - Source
.4
1
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
2 - Drain
Tab - Drain
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
PLUS220SMD (IXFV_S) Outline
PLUS220 (IXFV) Outline
IXFV 30N60P IXFV 30N60PS
IXFH 30N60P IXFT 30N60P