IXFH36N55Q IXYS, IXFH36N55Q Datasheet - Page 4

• Manufacturer Part Number: IXFH36N55Q
• Description: MOSFET N-CH 550V 36A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH36N55Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 128nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 550
• Id(cont), Tc=25°c, (a): 36
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 128
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 0000
1 000
1 00
1 08
72
63
54
45
36
27
90
72
54
36
1 8
1 8
9
0
0
Fig. 9. Source Current vs. Source-To-Drain
3.5
0.3
0
T
f = 1 M Hz
5
J
Fig. 7. Input Admittance
= 1 20
4
Fig. 11. Capacitance
-40
25
0.5
1 0
º
º
º
C
C
T
C
4.5
C
J
= 1 25
V
V
rss
1 5
V
C
SD
GS
DS
oss
Voltage
C
- Volts
- Volts
º
iss
0.7
- Volts
20
C
5
25
5.5
0.9
T
30
J
= 25
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6
35
º
C
6.5
1 .1
40
0.01
70
60
50
40
30
20
0.1
1 0
1 0
8
6
4
2
0
0
1
0
Fig. 12. Maximum Transient Thermal
0
1
T
J
V
I
I
9
= -40
Fig. 8. Transconductance
1 25
20
D
G
D S
25
= 1 8A
= 1 0mA
Pulse Width - milliseconds
= 275V
º
º
1 8
Fig. 10. Gate Charge
º
C
C
C
Q
40
G
27
1 0
Resistance
I
- nanoCoulombs
D
- Amperes
60
36
45
IXFH 36N55Q
80
IXFT 36N55Q
1 00
54
1 00
63
1 20
6,534,343
72
1 000
1 40
81