IXTH14N80 IXYS, IXTH14N80 Datasheet - Page 3

• Manufacturer Part Number: IXTH14N80
• Description: MOSFET N-CH 800V 14A TO-247
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTH14N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.7
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): 800
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 1. Output Characteristics at 25
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Figure 3. R
Figure 5. Drain Current vs. Case Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
16
12
20
16
12
8
4
0
8
4
0
-50
0
0
V
DS(on)
-25
GS
T
J
= 10V
= 25
5
2
normalized to 0.5 I
0
O
C
T
J
T
I
= 125
25
D
C
V
10
4
- Amperes
- Degrees C
DS
O
- Volts
C
T
50
J
= 25
V
GS
15
6
= 9V
O
75
C
8V
7V
6V
D25
100 125 150
O
20
C
8
value vs. I
5V
4V
25
10
D
Figure 2. Output Characteristics at 125
Figure 6. Admittance Curves
Figure 4. R
16
14
12
10
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
20
16
12
8
6
4
2
0
8
4
0
25
2
0
V
GS
DS(on)
= 10V
T
J
= 125
3
50
normalized to 0.5 I
4
T
J
= 125
O
C
T
o
C
J
V
V
4
75
8
- Degrees C
GS
DS
I
D
I
D
= 15A
- Volts
T
- Volts
= 7.5A
J
= 25
V
100
GS
12
5
o
C
= 9V
8V
7V
6V
D25
IXTH 14N80
O
125
value vs. T
16
6
C
5V
4V
150
20
7
J
3 - 4