STW35N65M5 STMicroelectronics, STW35N65M5 Datasheet - Page 16

• Manufacturer Part Number: STW35N65M5
• Description: MOSFET N-CH 650V 27A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW35N65M5

• Package / Case: TO-247
• Mounting Type: Through Hole
• Power - Max: 160W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Vgs(th) (max) @ Id: 5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 27A
• Drain To Source Voltage (vdss): 650V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 27 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Packaging mechanical data
5
16/18
Packaging mechanical data
DIM.
A0
B0
D1
K0
P0
P1
P2
W
D
R
E
F
T
TAPE MECHANICAL DATA
MIN.
10.5
15.7
1.59
1.65
0.25
23.7
11.4
11.9
1.5
4.8
3.9
1.9
50
D
2
mm
PAK FOOTPRINT
MAX.
10.7
15.9
1.61
1.85
12.1
0.35 0.0098 0.0137
24.3
11.6
1.6
5.0
4.1
2.1
0.413 0.421
0.618 0.626
0.059 0.063
0.062 0.063
0.065 0.073
0.449 0.456
0.189 0.197
0.153 0.161
0.468 0.476
0.075 0.082
1.574
0.933 0.956
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
Doc ID 15325 Rev 2
DIM.
G
A
B
C
D
N
T
BASE QTY
REEL MECHANICAL DATA
1000
MIN.
12.8
20.2
24.4
100
1.5
mm
STB/F/I/P/W35N65M5
MAX.
13.2
26.4
30.4
330
BULK QTY
0.059
0.504 0.520
0.960 1.039
3.937
0795
MIN.
1000
inch
12.992
MAX.
1.197