IXTH90P10P IXYS, IXTH90P10P Datasheet

MOSFET P-CH 100V 90A TO-247

IXTH90P10P

Manufacturer Part Number
IXTH90P10P
Description
MOSFET P-CH 100V 90A TO-247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTH90P10P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
5800pF @ 25V
Power - Max
462W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
-100.0
Id(cont), Tc=25°c, (a)
-90.0
Rds(on), Max, Tj=25°c, (?)
0.025
Ciss, Typ, (pf)
5800
Qg, Typ, (nc)
120
Trr, Typ, (ns)
144
Pd, (w)
462
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
= - 250µA
D
≤ V
= - 250µA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
, T
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTH90P10P
IXTT90P10P
-100
- 2.0
Min.
Characteristic Values
- 55 ... +150
- 55 ... +150
Maximum Ratings
1.13 / 10
- 225
Typ.
-100
-100
- 90
- 90
±20
±30
462
150
300
260
2.5
10
6
5
Max.
- 200 µA
±100 nA
Nm/lb.in.
- 4.0
- 25 µA
25 mΩ
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-247 (IXTH)
G = Gate
S = Source
Features:
Advantages
Applications
TO-268 (IXTT)
D25
International Standard Packages
Avalanche Rated
Fast Intrinsic Diode
Rugged PolarP
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
G
D
S
G
≤ ≤ ≤ ≤ ≤
=
=
S
D
TAB = Drain
TM
- 100V
- 90A
Process
25mΩ Ω Ω Ω Ω
= Drain
DS99986A(03/09)
(TAB)
(TAB)

Related parts for IXTH90P10P

IXTH90P10P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTH90P10P IXTT90P10P Maximum Ratings -100 = 1MΩ -100 GS ±20 ± 225 2.5 ≤ 150° 462 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. ...

Page 2

... I = 0.5 • DSS D D25 60 0.21 Characteristic Values Min. Typ. JM 144 0.92 -12.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH90P10P IXTT90P10P TO-247 (IXTH) Outline Max Terminals Gate nC Dim. Millimeter nC Min. Max 2.2 0.27 °C/W ...

Page 3

... Junction Temperature 2 -10V 2 90A 1.6 D 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -50 - Degrees Centigrade J IXTH90P10P IXTT90P10P - -18 -21 -24 -27 - 45A vs 45A D 75 100 125 150 75 100 125 150 ...

Page 4

... -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 1ms 10ms R Limit DS(on) 100ms 150º 25ºC C Single Pulse Volts DS IXTH90P10P IXTT90P10P 40ºC J 25ºC 125ºC -80 -90 -100 -110 80 90 100 110 120 100µs - 100 IXYS REF: T_90P10P(B7) 5-13-08 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTH90P10P IXTT90P10P 0.1 1 IXYS REF: T_90P10P(B7) 5-13-08 10 ...

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