IXFK32N50Q IXYS, IXFK32N50Q Datasheet - Page 2

• Manufacturer Part Number: IXFK32N50Q
• Description: MOSFET N-CH 500V 32A TO-264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK32N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3950pF @ 25V
• Power - Max: 416W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 416 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 3950
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 417
• Rthjc, Max, (ºc/w): 0.3
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
g(on)
gs
gd
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
F
GS
DS
= I
I
F
S
= 0 V
= 10 V; I
V
V
R
V
= 25A, -di/dt = 100 A/µs, V
, V
GS
GS
GS
G
GS
= 0 V, V
= 2 Ω (External),
= 10 V, V
= 10 V, V
= 0 V, Note 1
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
Note 1
DSS
DSS
(T
(T
J
J
, I
, I
R
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
= 100 V
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
18
Characteristic Values
Characteristic Values
3950
0.75
0.15
typ.
typ.
640
210
150
7.5
28
35
42
75
20
26
85
max.
max.
0.3
128
250
1.5
32
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
A
TO-264 AA Outline
PLUS 247
Terminals:
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
25.91
19.81
20.32
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
TM
Millimeter
5.45 BSC
5.46 BSC
Millimeter
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Outline
IXFK 32N50Q
IXFX 32N50Q
26.16
19.96
20.83
Max.
21.34
16.13
20.32
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
6,534,343
Min.
1.020
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
Max.
1.030
6,583,505
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190