IXTH24N50L IXYS, IXTH24N50L Datasheet - Page 5

• Manufacturer Part Number: IXTH24N50L
• Description: MOSFET N-CH 500V 24A TO-247
• Manufacturer: IXYS

Specifications of IXTH24N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 20V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 24 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.3
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 500
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2011 IXYS CORPORATION, All Rights Reserved
100
0.1
10
1
10
R
T
T
Single Pulse
J
C
DS
= 150ºC
= 25ºC
(on)
Operating Area @ T
Fig. 13. Forward-Bias Safe
Limit
V
D S
100
- Volts
C
= 25ºC
DC
100µs
1ms
10ms
25µs
1000
100
0.1
10
1
10
R
T
T
Single Pulse
DS(on)
J
C
= 150ºC
= 60ºC
Limit
Operating Area @ T
Fig. 14. Forward-Bias Safe
V
D S
100
- Volts
IXTH24N50L
C
= 60ºC
DC
IXYS REF: T_24N50L(7N)01-10-11-C
100µs
1ms
25µs
10ms
1000