IXFK150N10 IXYS, IXFK150N10 Datasheet - Page 3

• Manufacturer Part Number: IXFK150N10
• Description: MOSFET N-CH 100V 150A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK150N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 150
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 9000
• Qg, Typ, (nc): 360
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.24
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
400
350
300
250
200
150
100
175
150
125
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
50
75
50
25
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-50
0
Fig. 1 Output Characteristics
Fig. 5 Drain Current vs.
Fig. 3 R
T
T
J
J
= 25°C
-25
40
= 25°C
100N10
150N10
Case Temperature
80
DS(on)
0
T
120 160 200 240 280 320
25
C
I
vs. Drain Current
D
V
- Degrees C
- Amperes
DS
V
GS
50
- Volts
= 10V
V
GS
75
= 15V
100 125 150
V
GS
= 10V
9V
8V
7V
6V
5V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
300
250
200
150
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
50
0
Fig. 2 Input Admittance
-50
-50
Fig. 6 Temperature Dependence of
0
Fig. 4 Temperature Dependence
1
-25
-25
Breakdown and Threshold Voltage
of Drain to Source Resistance
2
0
0
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
T
GS
I
D
J
= 125
= 75A
- Volts
50
50
5
°
C
6
75
75
IXFK 100N10
IXFN 150N10
T
J
7
100 125 150
100 125 150
= 125
BV
V
GS(th)
8
DSS
°
C
9
10
3 - 4