IXFK32N60 IXYS, IXFK32N60 Datasheet - Page 4

• Manufacturer Part Number: IXFK32N60
• Description: MOSFET N-CH 600V 32A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK32N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 325nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.25
• Ciss, Typ, (pf): 9000
• Qg, Typ, (nc): 325
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
IXFK 32N60
IXFK 36N60
5,017,508
5,034,796
5,049,961
5,063,307
IXFN 32N60
IXFN 36N60
5,187,117
5,237,481
5,486,715
5,381,025