IXFH12N120 IXYS, IXFH12N120 Datasheet
IXFH12N120
Manufacturer Part Number
IXFH12N120
Description
MOSFET N-CH 1200V 12A TO-247
Manufacturer
IXYS
Datasheet
1.IXFH12N120.pdf
(4 pages)
Specifications of IXFH12N120
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
1.4
Ciss, Typ, (pf)
3400
Qg, Typ, (nc)
95
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2005 IXYS All rights reserved
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
DM
High Voltage
HiPerFET Power
MOSFET
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
Mounting torque
J
J
C
C
C
C
C
I
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
J
GS
DS
DS
GS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
DC
D
= 1 mA
= 4 mA
, V
= 0.5 • I
G
= 2 Ω
DS
= 0
GS
D25
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
JM
,
IXFH 12N120
1200
min.
Characteristic Values
3
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1200
1200
±30
±40
500
150
300
1.0
12
48
12
30
10
6
max.
±100
1.4
50
5
3
V/ns
mJ
mA
nA
µA
°C
°C
°C
°C
Ω
W
V
V
V
V
V
V
A
A
A
g
J
Features
Applications
Advantages
TO-247 AD
G = Gate,
S = Source,
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
V
I
R
t
D (cont)
rr
DSS
DS(on)
DS (on)
HDMOS
= 1200 V
=
=
≤ ≤ ≤ ≤ ≤ 300 ns
D = Drain,
TAB = Drain
TM
1.4 Ω Ω Ω Ω Ω
process
12 A
DS99334(02/05)
D (TAB)
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IXFH12N120 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2005 IXYS All rights reserved IXFH 12N120 Maximum Ratings 1200 = 1 MΩ 1200 GS ±30 ± 1.0 ≤ DSS 500 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 6 ...
Page 3
... V - Volts D S Fig Norm alize d to DS(on) 0.5 I Value vs. I D25 2.8 2 10V GS 2 1.8 1.6 1.4 1 Amperes D © 2005 IXYS All rights reserved º 6. º C 3.1 2 2.5 2.2 6.5V 1.9 1.6 6V 1.3 5.5V 0 125º 25º ...
Page 4
... Fig. 9. Source Current vs. Source -To-Drain Voltage 125º 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 25º 0.8 0.9 1 1.00 C iss C oss 0.10 C rss 0.01 25 ...