IXFX32N50 IXYS, IXFX32N50 Datasheet
IXFX32N50
Manufacturer Part Number
IXFX32N50
Description
MOSFET N-CH 500V 32A PLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFX32N50.pdf
(2 pages)
Specifications of IXFX32N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
5450pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.15
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
227
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
360
Rthjc, Max, (ºc/w)
0.50
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFX32N50
Manufacturer:
IXYS
Quantity:
2 400
Company:
Part Number:
IXFX32N50
Manufacturer:
IXYS
Quantity:
6 285
Part Number:
IXFX32N50
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFX32N50Q
Manufacturer:
IXYS
Quantity:
6 285
© 2000 IXYS All rights reserved
HiPerFET
N-Channel Enhancement Mode
High dv/dt, Low t
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AS
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
V
V
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
GS
DSS
DS
GS(th)
GS
DS
GS
GS
= V
= 0.8 • V
= 0 V, I
= ±20 V
= 0 V
= 10 V, I
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Test Conditions
temperature coefficient
S
temperature coefficient
C
C
C
C
C
C
J
J
J
GS
, I
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
D
D
DC
DM
TM
DSS
= 1 mA
= 4 mA
D
, V
, di/dt £ 100 A/ms, V
rr
= 15A
, HDMOS
Power MOSFET
DS
= 0
G
= 2 W
TM
GS
= 1 MW
T
T
Family
J
J
DD
= 25°C
= 125°C
£ V
(T
DSS
J
= 25°C, unless otherwise specified)
JM
,
min.
500
2
Characteristic Values
-55 ... +150
-55 ... +150
IXFX 32N50
Maximum Ratings
-0.206
0.102
typ.
500
500
±20
±30
120
360
150
300
1.5
32
32
45
5
6
±100 nA
max.
0.15
200 mA
4
1 mA
V/ns
%/K
%/K
mJ
°C
°C
°C
°C
W
W
V
V
V
V
A
A
A
V
V
J
g
Features
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
PLUS 247
G = Gate
S = Source
rated
power supplies
V
I
R
t
D25
rr
DSS
DS(on)
DS (on)
£ 250 ns
HDMOS
=
=
= 0.15 W
D = Drain
TM
500 V
process
32 A
98719A (7/00)
1 - 2
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IXFX32N50 Summary of contents
Page 1
... V DSS DS DSS 15A DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFX 32N50 TM Family Maximum Ratings 500 = 1 MW 500 GS ±20 ±30 32 120 ...
Page 2
... D25 110 0.15 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 0.85 8 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFX 32N50 PLUS247 TM Outline Max 730 pF 310 pF ns ...