STF42N65M5 STMicroelectronics, STF42N65M5 Datasheet - Page 8

• Manufacturer Part Number: STF42N65M5
• Description: MOSFET N-CH 650V 33A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF42N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4650pF @ 100V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.079 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8895-5

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Switching losses vs gate resistance
(norm)
V
GS(th)
1.0
0.6
V
1.1
0.9
0.8
0.7
0.5
0.4
0.3
100
0.6
0.2
500
300
1.0
0.9
0.8
0.7
600
400
200
(µJ)
(V)
SD
E
0
-50
0
0
vs temperature
characteristics
(1)
I
V
5
L=50µH
D
5
T
DD
=20A
J
=150°C
10
=400V
0
10
15
20
15
50
25
20
30
I
D
T
= 250 µA
J
=-25°C
25
35 40 45
100
Eon
T
J
=25°C
30
Eoff
T
Doc ID 15317 Rev 3
J
AM01574v1
I
AM01571v1
AM01575v1
(°C)
SD
R
G
(A)
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
R
(norm)
BV
DS(on)
1.00
0.95
0.90
1.05
DSS
1.5
2.0
1.0
0.5
-50
0
-50
temperature
0
0
I
V
D
GS
= 16.5 A
VDSS
50
50
= 10 V
I
D
= 1 mA
vs temperature
100
100
STx42N65M5
T
J
T
(°C)
AM01573v1
AM01572v1
J
(°C)