IXTK62N25 IXYS, IXTK62N25 Datasheet - Page 2

• Manufacturer Part Number: IXTK62N25
• Description: MOSFET N-CH 250V 62A TO-264
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTK62N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 390W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 62 A
• Power Dissipation: 390 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 62
• Rds(on), Max, Tj=25°c, (?): 0.035
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): 67
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
SM
d(on)
d(off)
f
S
r
rr
TO-264 Alternate Outline
fs
thJC
thCK
SD
iss
oss
G(on)
GD
rss
GS
rr
J
= 25°C unless otherwise specified)
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
F
F
Test Conditions
DS
GS
= I
= 30A, -di/dt = 100 A/µs, V
= 0V
S
= 10 V; I
V
V
R
V
, V
GS
GS
GS
G
= 1.5 Ω (External)
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 I
DS
4,835,592
4,850,072
DS
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
D25
, pulse test
4,881,106
4,931,844
DSS
DSS
R
, I
, I
= 100V
(T
D
D
J
5,034,796
= 0.5 I
= 0.5 I
5,017,508
= 25°C unless otherwise specified)
JM
Note: Leads and tab are solder
Ratings and Characteristics
D25
D25
5,049,961
5,063,307
Min.
Min.
35
Characteristic values
5400
1100
Typ.
0.15
360
Typ.
5,187,117
5,237,481
400
115
240
120
47
30
25
15
40
6
248
1.5
62
Max.
0.30 K/W
5,486,715
5,381,025
Max.
K/W
µ C
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
A
V
S
6,162,665
6,259,123 B1 6,404,065 B1
Note: IXTK62N25 MOSFET will be
supplied in either package
outline at the discretion of the
vendor.
TO-264 Outline
6,306,728 B1 6,534,343
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
25.91
19.81
20.32
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Millimeter
5.46 BSC
6,583,505
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
IXTK 62N25
Min.
1.020
6,683,344
6,710,405B2
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.215 BSC
Inches
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072