FMD21-05QC IXYS, FMD21-05QC Datasheet
FMD21-05QC
Manufacturer Part Number
FMD21-05QC
Description
MOSFET N-CH 500V 21A I4-PAC-5
Manufacturer
IXYS
Datasheet
1.FDM21-05QC.pdf
(2 pages)
Specifications of FMD21-05QC
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.22 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
192 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id25, Tc = 25°c, (a)
21
Id90, Tc = 90°c, (a)
15
Rds(on), Max, Tj = 25°c, (mohms)
220
Tf, Typ, (ns)
15
Tr, Typ, (ns)
20
Rthjc, Max, (ºc/w)
0.50
Package Style
ISOPLUS i4-PAC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMD21-05QC
Manufacturer:
ST
Quantity:
50 000
Q-Class
Power MOSFETs
Chopper Topologies
in ISOPLUS i4-PAC
Preliminary data
Symbol
V
V
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
R
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
MOSFET
D25
D90
DSS
GSS
d(on)
r
d(off)
f
DSS
GS
GSth
DSon
thJC
thJH
g
gs
gd
Conditions
T
T
T
Conditions
V
V
V
V
V
V
I
with heat transfer paste
D
VJ
C
C
GS
DS
DS
GS
GS
GS
= 14 A; R
= 25°C
= 90°C
= 10 V; V
= 10 V; V
= 25°C to 150°C
= 10 V; I
= 20 V; I
= V
= ±20 V; V
DSS
; V
G
D
D
GS
DS
DS
= 2 Ω
= 0.25 mA
= I
DS
= 0 V; T
= 0.5 • V
= 0.5 • V
TM
D90
= 0 V
T
VJ
VJ
DSS
DSS
= 25°C
= 125°C
; I
D
(T
= 14 A
VJ
= 25°C, unless otherwise specified)
3
4
1
2
FMD
min.
2.5
Characteristic Values
Maximum Ratings
0.93
250
typ.
95
20
42
20
20
50
15
500
±20
21
15
3
5
4
2
max.
220 mΩ
250
200
4.5
0.5 K/W
FDM
K/W
nC
nC
nC
µA
µA
nA
ns
ns
ns
ns
V
V
A
A
V
I
V
R
Features
• Q-Class Power MOSFET technology
• HiPerDyn
• ISOPLUS i4-PAC
Applications
• chopper for power factor correction
• supply of high frequency transformer
D25
- low R
- low gate charge for high frequency
- unclamped inductive switching (UIS)
- dv/dt ruggedness
- consisting of series connected diodes
- enhanced dynamic behaviour for
- isolated back surface
- UL registered E72873
- low coupling capacity
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- switched mode power supplies
- welding converters
DSS
DSon typ.
operation
capability
high frequency operation
between pins and heatsink
1
DSon
5
TM
FRED
= 21 A
= 500 V
= 190 mΩ Ω Ω Ω Ω
FMD 21-05QC
FDM 21-05QC
TM
package
1 - 2
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FMD21-05QC Summary of contents
Page 1
... Ω d(off thJC R with heat transfer paste thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved FMD Maximum Ratings 500 ± Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. 2.5 = 25° ...
Page 2
... Conditions C coupling capacity between shorted pins p and mounting tab in the case d ,d pin - pin pin - backside metal S A Weight © 2004 IXYS All rights reserved Maximum Ratings 600 60 40 Characteristic Values min. typ. max. 2.5 2.8 1.9 0. 125°C ...