IXFR44N50Q IXYS, IXFR44N50Q Datasheet
IXFR44N50Q
Manufacturer Part Number
IXFR44N50Q
Description
MOSFET N-CH 500V 34A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR44N50Q.pdf
(4 pages)
Specifications of IXFR44N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
7000pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
34 A
Power Dissipation
310 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
34
Rds(on), Max, Tj=25°c, (?)
0.12
Ciss, Typ, (pf)
6400
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
313
Rthjc, Max, (ºc/w)
0.40
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR44N50Q
Manufacturer:
IXYS
Quantity:
200
HiPerFET
Power MOSFETs
ISOPLUS247
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Q
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
ISOL
DSS
GS(th)
DSS
DS(on)
V
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
Notes 2, 3
Test Conditions
S
GS
DS
GS
DS
GS
GS
C
C
C
C
C
C
J
J
J
= 0 V, I
= V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, Note 1
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V
= 10 V, I
= ±20 V, V
= V
TM
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
= 250µA
= 4mA
D
TM
= I
DS
G
= 2 Ω
T
, Q-Class
= 0
g
t = 1 min
, High dv/dt
GS
= 1 MΩ
DD
(T
T
44N50Q
48N50Q
≤ V
J
J
= 25°C, unless otherwise specified)
= 125°C
DSS
IXFR 44N50Q
IXFR 48N50Q
44N50Q
48N50Q
44N50Q
48N50Q
44N50Q
48N50Q
500
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
2500
500
500
±20
±30
176
192
310
150
300
2.5
34
40
44
48
60
15
5
max.
±100 nA
120 mΩ
110 mΩ
100 µA
4.0 V
2 mA
V/ns
mJ
V~
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
A
g
V
J
500 V 34 A 120 mΩ Ω Ω Ω Ω
500 V 40 A 110 mΩ Ω Ω Ω Ω
t
ISOPLUS 247
Features
Applications
Advantages
rr
G = Gate
S = Source
* Patent pending
V
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
IXYS advanced low Q
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic diode
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
DSS
≤ ≤ ≤ ≤ ≤ 250 ns
E153432
I
TM
D25
D = Drain
Isolated backside*
DS98702D(08/03)
g
process
R
DS(on)
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IXFR44N50Q Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS DS(on Notes 2, 3 © 2003 IXYS All rights reserved IXFR 44N50Q IXFR 48N50Q Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 44N50Q 34 48N50Q 40 44N50Q 176 48N50Q 192 44N50Q 44 48N50Q 48 60 2.5 ≤ DSS 310 -55 ... +150 150 -55 ...
Page 2
... 25A,-di/dt = 100 A/µ Note: 1. Pulse width limited Pulse test, t ≤ 300 µs, duty cycle d ≤ IXFR44N50Q IXFR48N50Q IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25° ...
Page 3
... Volts D S Fig Norm alized to I DS(on) Value vs 10V 3.1 GS 2.8 2.5 2.2 1.9 1.6 1 Amperes D © 2003 IXYS All rights reserved 120 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 D25 125º 25º ...
Page 4
... V - Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25ºC J 0.8 0 ...