IXFR90N30 IXYS, IXFR90N30 Datasheet
IXFR90N30
Manufacturer Part Number
IXFR90N30
Description
MOSFET N-CH 300V 75A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR90N30.pdf
(2 pages)
Specifications of IXFR90N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
33 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
10000pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.033 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.033
Ciss, Typ, (pf)
10000
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
417
Rthjc, Max, (ºc/w)
0.30
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR90N30
Manufacturer:
SHINDENGE
Quantity:
20 000
HiPerFET
ISOPLUS247
(Electrically Isolated Back Surface)
Single MOSFET Die
© 2000 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GSM
AR
AS
ISOL
DSS
GS
D
GS(th)
DSS
DS(on)
V
V
V
V
Notes 2, 3
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
Test Conditions
S
DS
GS
GS
DS
J
J
C
C
C
C
C
J
C
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, Note 1
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V
= ±20 V, V
= V
= 10 V, I
DM
GS
Power MOSFETs
, di/dt £ 100 A/ms, V
DSS
TM
D
D
D
= I
DS
G
= 2 W
= 0
T
mA
t = 1 min
GS
= 1 MW
DD
(T
£ V
T
T
J
J
J
= 25°C, unless otherwise specified)
DSS
=
= 125°C
25°C
min.
Characteristic Values
IXFR 90N30
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
2500
300
300
±20
±30
360
400
150
300
75
90
64
5
3
5
max.
±100 nA
100 mA
33 mW
2 mA
V/ns
mJ
V~
°C
°C
°C
°C
W
V
V
A
A
A
V
V
g
J
ISOPLUS 247
G = Gate
S = Source
* Patent pending
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC & DC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
Low noise to ground
V
I
R
t
D25
rr
DS (on)
DSS
DS(on)
£ 250 ns
HDMOS
TM
D = Drain
= 300
=
=
Isolated backside*
TM
75
33
process
98764 (11/00)
V
A
W
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IXFR90N30 Summary of contents
Page 1
... D GS(th ± GSS DSS DS DSS DS(on Notes 2, 3 © 2000 IXYS All rights reserved IXFR 90N30 Maximum Ratings 300 = 1 MW 300 GS ±20 ±30 75 360 £ DSS 400 -55 ... +150 150 -55 ... +150 300 2500 5 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
Page 2
... 50A,-di/dt = 100 A/ms Note: 1. Pulse width limited Pulse test, t £ 300 ms, duty cycle d £ 45A T IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. Notes 10000 1800 ...