IXFR64N50P IXYS, IXFR64N50P Datasheet
IXFR64N50P
Manufacturer Part Number
IXFR64N50P
Description
MOSFET N-CH 500V 35A ISOPLUS247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFR64N50P.pdf
(4 pages)
Specifications of IXFR64N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
95 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
8700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.095 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
50 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
35 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
37
Rds(on), Max, Tj=25°c, (?)
0.095
Ciss, Typ, (pf)
9700
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
ISOPLUS247
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
GSS
DSS
© 2006 IXYS All rights reserved
D25
DM
AR
GS(th)
J
JM
stg
L
d
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
TM
D
= 8 mA
= 250 µA
, V
= 32 A
G
= 4 Ω
DS
= 0
,
Note 1
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXFR 64N50P
20..120 / 4.5..26
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
2500
500
500
±30
±40
150
300
150
300
2.5
35
43
80
20
5
±200
1000
Max.
5.5
25
95
V/ns
N/lb
m Ω
° C
mJ
nA
µA
µA
V~
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
J
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
ISOPLUS247 (IXFR)
G = Gate
S = Source
V
R
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
AC motor control
I
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
D25
t
DSS
G
DS(on)
rr
D
E153432
DS (on)
S
HDMOS
= 500
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 200 ns
D = Drain
(Isolated Tab)
TM
95 mΩ Ω Ω Ω Ω
35
process
DS99412E(03/06)
A
V
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IXFR64N50P Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS DS(on © 2006 IXYS All rights reserved IXFR 64N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 35 150 2.5 ≤ DSS 300 -55 ... +150 150 -55 ... +150 300 2500 20..120 / 4.5..26 5 Characteristic Values Min. Typ. 500 3.0 ± ...
Page 2
... Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
Page 3
... V olts D S Fig Nor m alize d to DS(on 32A V alue ain Cur 3 10V 3.1 GS 2.8 2.5 2.2 1.9 1.6 1 mperes D © 2006 IXYS All rights reserved º C 160 140 120 100 º C 3.1 2.8 2.5 2.2 6V 1.9 1.6 1.3 5V 0.7 ...
Page 4
... Source -To-Drain V oltage 200 175 150 125 100 125º 0.4 0.6 0 olts S D Fig. 11. Capacitance 100000 f = 1MH z 10000 1000 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 1.2 1 rss IXFR 64N50P Fig. 8. Trans conductance T = -40º ...