IXTK90N15 IXYS, IXTK90N15 Datasheet - Page 2

• Manufacturer Part Number: IXTK90N15
• Description: MOSFET N-CH 150V 90A TO-264
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTK90N15

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 6400pF @ 25V
• Power - Max: 390W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 390 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.016
• Ciss, Typ, (pf): 6400
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 300
• Pd, (w): 390
• Rthjc, Max, (k/w): 0.3
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
IXYS reserves the right to change limits, test conditions, and dimensions.
SM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
g(on)
gs
gd
rr
J
Test Conditions
F
F
Test Conditions
GS
DS
S
GS
GS
GS
G
GS
D
DS
DS
DS
D25
DSS
DSS
R
D
D
J
JM
Ratings and Characteristics
D25
D25
Min.
Min.
Characteristic values
Typ.
Typ.
Max.
Max.
TO-264 AA Outline
IXTK 90N15