STW45NM50FD STMicroelectronics, STW45NM50FD Datasheet - Page 6

• Manufacturer Part Number: STW45NM50FD
• Description: MOSFET N-CH 500V 45A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW45NM50FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 45 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2718-5

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area
Output characteristics
Transconductance
Doc ID 7955 Rev 10
Figure 3.
Figure 5.
Figure 7.
Thermal impedance
Transfer characteristics
Static drain-source on resistance
STW45NM50FD