IXFK20N120 IXYS, IXFK20N120 Datasheet
IXFK20N120
Manufacturer Part Number
IXFK20N120
Description
MOSFET N-CH 1200V 20A TO-264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK20N120.pdf
(4 pages)
Specifications of IXFK20N120
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
7400pF @ 25V
Power - Max
780W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.75 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
780 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.75
Ciss, Typ, (pf)
7400
Qg, Typ, (nc)
160
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
780
Rthjc, Max, (ºc/w)
0.16
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2003 IXYS All rights reserved
Symbol
V
V
I
I
R
AR
D25
DM
GSS
DSS
J
JM
stg
L
DGR
GS
AR
D
DSS
GSM
AS
GS(th)
d
DSS
DS(on)
V
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
Note 2
Test Conditions
S
GS
DS
DS
GS
J
J
C
C
C
C
C
J
C
GS
GS
= V
= 0 V, I
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, Note 1
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V
= V
= 10 V, I
= ±30 V, V
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
TM
D
D
= 1mA
= 8mA
D
= 0.5 • I
G
DS
= 2 Ω
= 0
TO-264
PLUS 247
TO-264
D25
GS
= 1 MΩ
DD
Advanced Technical Information
(T
≤ V
T
T
J
J
J
= 25°C, unless otherwise specified)
DSS
= 25°C
= 125°C
IXFK 20N120
IXFX 20N120
1200
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
0.9/6
Maximum Ratings
typ.
1200
1200
±30
±40
780
150
300
20
80
10
40
2
5
max.
Nm/lb.in.
±100 nA
100 µA
0.75 Ω
10
4.5 V
6
2 mA
V/ns
mJ
°C
°C
°C
°C
W
V
V
V
V
A
A
A
g
g
J
V
Features
Applications
Advantages
PLUS 247
(IXFX)
TO-264 AA (IXFK)
G = Gate
S = Source
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
AC motor control
Temperature and lighting controls
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
PLUS 247
mounting
Space savings
High power density
V
I
R
t
D25
rr
DSS
DS(on)
DS (on)
≤ ≤ ≤ ≤ ≤ 300 ns
G
TM
D
TM
G
HDMOS
S
package for clip or spring
D
= 1200 V
=
=
S
TM
D = Drain
TAB = Drain
process
0.75 Ω Ω Ω Ω Ω
DS99112(11/03)
20 A
D (TAB)
D (TAB)
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IXFK20N120 Summary of contents
Page 1
... ± GSS DSS DS DSS 0.5 • I DS(on D25 Note 2 © 2003 IXYS All rights reserved Advanced Technical Information IXFK 20N120 IXFX 20N120 Maximum Ratings 1200 = 1 MΩ 1200 GS ±30 ± ≤ DSS 780 -55 ... +150 150 -55 ... +150 300 0.9/6 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 2
... I RM Note: 1. Pulse width limited Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 3
Fig. 1. Output Characteristics @ 25 deg Volts D S Fig Norm alized to I DS(on) Junction Tem perature 2.8 ...
Page 4
Fig. 7. Transconductance -40º 25ºC 125º Amperes D Fig. 9. Gate Charge 600V 9 DS ...