IXFK90N30 IXYS, IXFK90N30 Datasheet - Page 4

• Manufacturer Part Number: IXFK90N30
• Description: MOSFET N-CH 300V 90A TO-264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK90N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 10000pF @ 25V
• Power - Max: 560W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.033 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 560 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.033
• Ciss, Typ, (pf): 10000
• Qg, Typ, (nc): 360
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10
200
160
120
80
40
8
6
4
2
0
1.000
0.100
0.010
0.001
0
0
Fig.7 Gate Charge Characteristic Curve
0.2
Fig.9 Drain Current vs Drain to Source Voltage
10
Fig.10 Transient Thermal Impedance
-4
50
0.4
V
DS
I
I
D
G
T
= 150 V
= 45 A
= 10 mA
Gate Charge - nC
J
100
= 125
0.6
V
O
SD
C
150
- Volts
0.8
10
-3
200
1.0
T
J
250
= 25
1.2
O
C
300
1.4
10
Pulse Width - Seconds
-2
0.5
20
10
5
1
0
10
Fig.8 Capacitance Curves
-1
5
10
f = 100kHz
15
V
Crss
DS
- Volts
20
Coss
10
25
0
IXFK 90N30
IXFX 90N30
30
Ciss
35
40
10
1