IXKR25N80C IXYS, IXKR25N80C Datasheet
IXKR25N80C
Manufacturer Part Number
IXKR25N80C
Description
MOSFET N-CH 800V 25A ISOPLUS247
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKR25N80C.pdf
(2 pages)
Specifications of IXKR25N80C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
4V @ 2mA
Gate Charge (qg) @ Vgs
355nC @ 10V
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
125 mOhms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
180 nC
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
25
Rds(on), Max, Tj=25°c, (?)
0.150
Ciss, Typ, (pf)
4600
Qg, Typ, (nc)
180
Trr, Max, (ns)
550
Trr, Typ, (ns)
-
Pd, (w)
250
Rthjc, Max, (k/w)
0.50
Visol, Rms, (v)
2500
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXKR25N80C
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
CoolMOS
in ISOPLUS247
N-Channel Enhancement Mode
Low R
Package with Electrically Isolated Base
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFET
Symbol
V
V
I
I
dv/dt
E
E
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
R
DSS
GSS
D25
D90
d(on)
r
d(off)
f
GS(th)
GS
F
DSS
AS
AR
DSon
thJC
g
gs
gd
DSon
, High V
Conditions
T
T
T
V
T
I
I
Conditions
V
V
V
V
V
V
I
(reverse conduction) I
D
D
D
VJ
C
C
VJ
GS
DS
DS
GS
GS
GS
DS
= 34 A; R
= 4 A; L = 80 mH; T
= 7 A; L = 3.3 mH; T
= 25°C
= 90°C
= 25°C to 50°C
= 50°C
= V
= 0 V; I
= 20 V; I
= ± 20 V; V
= 0 V; V
= 0 V; V
< V
DSS
DSS
™ 1)
; V
; I
DSS
G
F
D
D
GS
DS
DS
= 2.2 Ω
< 7 A | di
= I
= 2 mA
DS
MOSFET
= 0 V; T
= 640 V; I
= 640 V
Power MOSFET
D90
= 0 V
™
F
Package
T
= 2.5 A; V
VJ
VJ
F
C
C
/dt | < 00 A/µs
D
= 25°C
= 25°C
= 25°C
= 25°C
= 34 A
(T
Advanced Technical Information
VJ
GS
= 25°C, unless otherwise specified)
= 0 V
min.
2
Characteristic Values
Maximum Ratings
typ.
25
00
80
24
92
25
5
72
6
G
max.
± 20
0.67
800
50
200
355
0.5
.3
0.5
50
25
8
6
4
S
V/ns
D
K/W
mW
mJ
mJ
nC
nC
nC
µA
µA
nA
ns
ns
ns
ns
V
V
A
A
V
V
I
V
R
ISOPLUS 247
G = Gate, D = Drain, S = Source
Features
•
• fast CoolMOS
• Enhanced total power density
Applications
•
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
D25
ISOPLUS247™ package with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
- High power dissipation
- High temperature cycling capability
- JEDEC TO-247AD compatible
- Easy clip assembly
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
- Low thermal resistance
Switched mode power supplies (SMPS)
3
reduced EMI
of chip on DCB
inductive switching (UIS)
due to reduced chip thickness
DSS
DS(on)
rd
E53432
generation
)
CoolMOS
Infineon Technologies AG.
= 25 A
= 800 V
= 125 mW
G
D
IXKR 25N80C
™ )
S
™
™
power MOSFET
is a trademark of
20080526a
- 2
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IXKR25N80C Summary of contents
Page 1
... d(off (reverse conduction 2 thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Advanced Technical Information G Maximum Ratings /dt | < 00 A/µ 25° 25°C C Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. ...
Page 2
... C coupling capacity bewtween shorted P pin and mounting tab in the case R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Advanced Technical Information Maximum Ratings 2500 -40...+50 -40...+25 300 20 ... 20 Characteristic Values min ...