IXFR21N100Q IXYS, IXFR21N100Q Datasheet - Page 2

• Manufacturer Part Number: IXFR21N100Q
• Description: MOSFET N-CH 1KV 18A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFR21N100Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 5900pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 18
• Rds(on), Max, Tj=25°c, (?): 0.50
• Ciss, Typ, (pf): 5900
• Qg, Typ, (nc): 170
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 417
• Rthjc, Max, (ºc/w): 0.30
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note: 1. Pulse width limited by T
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
G(on)
GS
GD
2. Pulse test, t
3. I
T
= 10.5A
Test Conditions
V
Test Conditions
V
Repetitive; Note 1
I
F
GS
DS
= I
I
F
= 0 V
= 10 V; I
V
V
R
V
Notes 2, 3
= I
T
, V
GS
GS
GS
G
S
= 1
,-di/dt = 100 A/ s, V
GS
= 0 V, V
= 10 V, V
= 10 V, V
300 s, duty cycle d
= 0 V, Notes 2, 3
D
(External), Notes 2, 3
= I
DS
T
DS
DS
= 25 V, f = 1 MHz
JM
= 0.5 • V
= 0.5 • V
R
Notes 2, 3
DSS
(T
DSS
(T
= 100 V
J
J
, I
, I
2 %
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
D
D
= I
= I
T
T
min.
min.
Characteristic Values
16
4,835,592
4,850,072
Characteristic Values
5900
0.15
typ.
typ.
550
170
1.4
22
90
21
18
60
12
38
75
8
4,881,106
4,931,844
0.35
max.
max.
250
1.5
21
84
5,017,508
5,034,796
K/W
K/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
C
S
A
A
V
A
5,049,961
5,063,307
ISOPLUS 247 OUTLINE
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
IXFR 21N100Q
20.80
15.75
19.81
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
5,187,117
5,237,481
Millimeter
5.45 BSC
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
5,486,715
5,381,025
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Inches
6,306,728B1