IXFK27N80Q IXYS, IXFK27N80Q Datasheet - Page 2

• Manufacturer Part Number: IXFK27N80Q
• Description: MOSFET N-CH 800V 27A TO-264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK27N80Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 27 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 27
• Rds(on), Max, Tj=25°c, (?): 0.32
• Ciss, Typ, (pf): 7600
• Qg, Typ, (nc): 170
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 481
• Rthjc, Max, (ºc/w): 0.26
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
RM
d(on)
d(off)
S
SM
r
f
rr
fs
oss
thJC
thCK
SD
iss
rss
g(on)
gs
gd
RM
1. Pulse test, t
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
F
DS
GS
= I
I
F
S
= 0 V
= 10 V; I
V
V
R
V
= I
, V
GS
GS
GS
G
S
= 1
GS
300 s, duty cycle d
,-di/dt = 100 A/ s, V
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V, Note 1
D
(External),
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
R
DSS
DSS
Note 1
2 %
(T
(T
= 100 V
J
J
, I
, I
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
D
D
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
20
Characteristic Values
Characteristic Values
4,835,592
4,850,072
7600
0.15
typ.
typ.
750
120
170
1.3
27
20
28
50
13
47
65
8
4,881,106
4,931,844
0.26
max.
max.
108
250
1.5
27
K/W
K/W
5,017,508
5,034,796
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
C
S
A
A
V
A
TO-264 AA Outline
PLUS 247
5,049,961
5,063,307
Terminals:
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
25.91
19.81
20.32
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
TM
Millimeter
5.45 BSC
5.46 BSC
Millimeter
5,187,117
5,237,481
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Outline
IXFK 27N80Q
IXFX 27N80Q
19.96
20.83
26.16
Max.
21.34
16.13
20.32
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Min.
5,486,715
5,381,025
1.020
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
6,306,728B1