IXFX64N50P IXYS, IXFX64N50P Datasheet - Page 4

MOSFET N-CH 500V 64A PLUS247

IXFX64N50P

Manufacturer Part Number
IXFX64N50P
Description
MOSFET N-CH 500V 64A PLUS247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFX64N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
64A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
8700pF @ 25V
Power - Max
830W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
64 A
Power Dissipation
830 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
64
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
9700
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
830
Rthjc, Max, (ºc/w)
0.15
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX64N50P
Manufacturer:
VISHAY
Quantity:
9 000
Part Number:
IXFX64N50P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFX64N50P
Quantity:
92
IXYS reserves the right to change limits, test conditions, and dimensions.
100000
10000
200
175
150
125
100
1000
90
80
70
60
50
40
30
20
10
75
50
25
100
0
0
10
3.5
0.4
0
f = 1MH z
5
T
4
J
0.6
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Sour ce Cur re nt vs .
= 125ºC
Source -To-Drain V oltage
10
4.5
T
J
V
V
0.8
15
= 125ºC
G S
V
S D
-40ºC
D S
25ºC
- V olts
- V olts
5
20
- V olts
T
J
= 25ºC
1
25
5.5
30
1.2
C is s
C os s
C rss
6
35
6.5
1.4
40
1.00
0.10
0.01
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
Fig. 12. M axim um Tr ans ie nt The r m al
0
0
1
V
I
I
D
G
DS
20
= 32A
= 10m A
20
Fig. 8. Trans conductance
= 250V
Fig. 10. Gate Char ge
Pulse Width - milliseconds
40
40
T
Q
J
Re s is tance
= -40ºC
G
10
125ºC
I
60
25ºC
- nanoCoulombs
D
60
- A mperes
80
80
100
IXFK 64N50P
IXFX 64N50P
100
100
120
120
140
1000
140
160

Related parts for IXFX64N50P