IXFK21N100Q IXYS, IXFK21N100Q Datasheet
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Manufacturer Part Number
IXFK21N100Q
Description
MOSFET N-CH 1000V 21A TO-264
Specifications of IXFK21N100Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6900pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
21
Rds(on), Max, Tj=25°c, (?)
0.50
Ciss, Typ, (pf)
5900
Qg, Typ, (nc)
170
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
HiPerFET
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low t
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
JM
L
GSM
AR
AS
J
stg
DSS
DGR
GS
D
d
GS(th)
DSS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
V
Note 1
V
V
V
V
Test Conditions
V
S
C
C
C
C
C
C
J
J
J
GS
DS
DS
GS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= 10 V, I
= V
= 0 V
= ±20 V, V
DM
GS
rr
, di/dt ≤ 100 A/µs, V
DSS
TM
, I
D
D
= 1mA
= 4mA
D
T
G
= 0.5 • I
J
DS
= 2 Ω
= 125°C
= 0
TO-264
PLUS 247
TO-264
D25
GS
= 1 MΩ
DD
≤ V
(T
J
DSS
= 25°C, unless otherwise specified)
JM
1000
min.
3
IXFK 21N100Q
IXFX 21N100Q
typ.
Characteristic Values
-55 ... +150
-55 ... +150
0.4/6
Maximum Ratings
1000
1000
max.
±100
±20
±30
500
150
300
0.50
2.5
100
5.5
21
84
21
60
10
10
6
2
Nm/lb.in.
V/ns
mJ
°C
°C
°C
°C
mA
W
nA
µA
V
V
V
V
A
A
A
g
g
J
V
Ω
V
TO-264 AA (IXFK)
G = Gate
S = Source
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
•
Advantages
•
•
•
PLUS 247
IXYS advanced low Q
Low R
Molding epoxies meet UL 94 V-0
DC-DC converters
Battery chargers
DC choppers
AC motor control
PLUS 247
Low gate charge and capacitances
International standard packages
Rated for unclamped Inductive load
Switched-mode and resonant-mode power
Temperature and lighting controls
Space savings
High power density
- easier to drive
- faster switching
switching (UIS) rated
flammability classification
supplies
mounting
V
I
R
D25
t
DS (on)
rr
DSS
DS(on)
G
TM
≤ ≤ ≤ ≤ ≤ 250 ns
TM
D
(IXFX)
G
package for clip or spring
= 1000 V
=
=
D
S
TAB = Drain
D = Drain
g
0.50 Ω Ω Ω Ω Ω
DS98677D(10/03)
process
21 A
(TAB)
(TAB)
Related parts for IXFK21N100Q
IXFK21N100Q Summary of contents
... ± GSS DSS DS DSS 125° 0.5 • I DS(on D25 Note 1 © 2002 IXYS All rights reserved IXFK 21N100Q IXFX 21N100Q Maximum Ratings 1000 = 1 MΩ 1000 GS ±20 ± 2.5 ≤ DSS 500 -55 ... +150 150 -55 ... +150 300 0.4 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...
... Volts DS Fig vs. Drain Current DS(ON) 3 10V GS 2 125 J 2.0 1 1.0 0 Amperes D Fig. 5. Drain Current vs. Case Temperature -50 - Degrees C C © 2002 IXYS All rights reserved 10V 100 125 150 IXFK 21N100Q IXFX 21N100Q Fig. 2. Output Characteristics at 125 125 10V Volts DS Fig vs. T DS(ON ...
... V - Volts SD 0.300 0.100 0.010 0.001 -4 10 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 10000 5000 2500 1000 100 125 150 175 0.6 0.8 1.0 Fig. 10. Thermal Impedance ...
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