IXFR150N15 IXYS, IXFR150N15 Datasheet
IXFR150N15
Manufacturer Part Number
IXFR150N15
Description
MOSFET N-CH 150V 105A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR150N15.pdf
(2 pages)
Specifications of IXFR150N15
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
105A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
9100pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0125 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
105 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
105
Rds(on), Max, Tj=25°c, (?)
0.0125
Ciss, Typ, (pf)
9100
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
417
Rthjc, Max, (ºc/w)
0.30
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
HiPerFET
ISOPLUS247
(Electrically Isolated Backside)
Single MOSFET Die
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
D25
D(RMS)
DM
AR
DSS
GSS
L
DGR
AR
AS
D
J
JM
stg
DSS
GS
GSM
ISOL
DSS
GS(th)
DS(on)
Notes 2, 3
V
V
Test Conditions
T
T
Continuous
Transient
T
External lead (current limit)
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
Test Conditions
V
V
V
V
S
C
C
C
C
C
C
GS
J
J
J
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (MOSFET chip capability)
= 25°C, Note 1
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= V
= 0 V, I
= ±20 V, V
= V
= 10 V, I
= 0 V
TM
DM
GS
, di/dt £ 100 A/ms, V
DSS
, I
Power MOSFETs
D
D
= 3mA
= 8mA
TM
D
= I
G
DS
= 2 W
T
= 0
t = 1 min
GS
= 1 MW
DD
£ V
T
T
(T
J
J
DSS
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
Advanced Technical Information
min.
150
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
IXFR 150N15
typ.
2500
150
150
±20
±30
105
600
150
400
150
300
76
60
5
3
5
max.
12.5 mW
±100 nA
100 mA
4.0 V
2 mA
V/ns
mJ
V~
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
J
g
ISOPLUS 247
Features
• Silicon chip on Direct-Copper-Bond
• Low drain to tab capacitance(<35pF)
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC and DC motor and servo controls
• Amplifiers
Advantages
• Easy assembly
• Space savings
• High power density
• Low collector capacitance to ground
G = Gate
S = Source
* Patent pending
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
rated
power supplies
(low EMI)
E153432
DS (on)
V
I
R
t
D25
rr
DSS
DS(on)
£ 250 ns
HDMOS
TM
D = Drain
= 150 V
= 105 A
= 12.5 mW
TM
process
98656 (03/17/00)
1 - 2
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IXFR150N15 Summary of contents
Page 1
... GSS DSS DS DSS DS(on Notes 2, 3 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Advanced Technical Information IXFR 150N15 Maximum Ratings 150 = 1 MW 150 GS ±20 ±30 105 76 600 150 60 3 £ DSS 400 -55 ...
Page 2
... J min. typ. max. 150 600 1.5 250 1.1 = 100 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXFR 150N15 ISOPLUS 247 (IXFR) OUTLINE S pF ...