IXFK90N20Q IXYS, IXFK90N20Q Datasheet - Page 2

MOSFET N-CH 200V 90A TO-264AA

IXFK90N20Q

Manufacturer Part Number
IXFK90N20Q
Description
MOSFET N-CH 200V 90A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFK90N20Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
50 s
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Rise Time
31 ns
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
90
Rds(on), Max, Tj=25°c, (?)
0.022
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFK90N20Q
Manufacturer:
NXP
Quantity:
40 000
Part Number:
IXFK90N20QS
Manufacturer:
IXYS
Quantity:
200
IXYS reserves the right to change limits, test conditions, and dimensions.
Note: 1. Pulse test, t
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
S
RM
d(on)
d(off)
f
SM
r
rr
fs
oss
g(on)
gd
thJC
thCK
SD
iss
rss
gs
RM
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
F
DS
GS
= I
I
F
= 45A,-di/dt = 100 A/ s, V
S
= 0 V
= 10 V; I
V
V
R
V
, V
GS
GS
GS
G
= 1
GS
= 0 V, V
= 10 V, V
= 10 V, V
300 s, duty cycle d
= 0 V, Note 1
D
(External),
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
Note 1
DSS
DSS
(T
(T
R
2 %
J
, I
, I
J
= 100 V
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
D
D
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
4,835,592
4,850,072
Characteristic Values
40
Characteristic Values
6800
1620
typ.
0.15
typ.
480
190
1.4
10
50
35
31
82
12
40
90
4,881,106
4,931,844
0.26
max.
max.
360
200
1.3
90
5,017,508
5,034,796
K/W
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
C
S
A
A
V
A
TO-264 AA Outline
PLUS247
5,049,961
5,063,307
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
25.91
19.81
20.32
TM
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
20.80
15.75
19.81
Millimeter
5,187,117
5,237,481
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
5.46 BSC
(IXFX) Outline
5.45 BSC
IXFK 90N20Q
IXFX 90N20Q
Millimeter
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
5,486,715
5,381,025
Min.
1.020
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
Min. Max.
.215 BSC
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Inches
Inches
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
6,306,728B1

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