IXFL100N50P IXYS, IXFL100N50P Datasheet
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Manufacturer Part Number
IXFL100N50P
Description
MOSFET N-CH 500V 70A ISOPLUS264
Specifications of IXFL100N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
52 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
20000pF @ 25V
Power - Max
625W
Mounting Type
Through Hole
Package / Case
ISOPLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.052 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
625 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
70
Rds(on), Max, Tj=25°c, (?)
0.052
Ciss, Typ, (pf)
20000
Qg, Typ, (nc)
240
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
625
Rthjc, Max, (ºc/w)
0.2
Package Style
ISOPLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
ISOPLUS264
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
C
DS(on)
© 2006 IXYS All rights reserved
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
I
Mounting force
V
S
ISOL
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
≤ 1 mA
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
TM
= I
G
= 2 Ω
DS
T
, Note 1
= 0
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
t = 1 s
t = 1 min
DSS
IXFL 100N50P
JM
,
28..150 / 6.4..30
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
2500
3000
500
500
±30
±40
250
100
100
625
150
300
70
20
5
5
±200
2000
Max.
5.0
25
52
V/ns
N/lb
m Ω
° C
mJ
nA
µA
µA
V~
V~
°C
°C
°C
W
g
V
V
V
V
V
V
A
A
A
J
V
I
R
t
ISOPLUS264
G = Gate
S = Source
Features
l
l
l
l
l
l
Advantages
l
l
l
D25
rr
International standard isolated
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
package
Fast intrinsic diode
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
S
≤ ≤ ≤ ≤ ≤
= 500
=
≤ ≤ ≤ ≤ ≤ 200 ns
D = Drain
52 mΩ Ω Ω Ω Ω
70
ISOLATEDTAB
DS99563E(01/06)
V
A
Related parts for IXFL100N50P
IXFL100N50P Summary of contents
... GS(th ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS All rights reserved IXFL 100N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 70 250 JM 100 100 5 ≤ DSS 625 -55 ... +150 150 -55 ... +150 300 min 2500 3000 28..150 / 6.4..30 5 Characteristic Values Min ...
... I RM Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ Test Current IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
... DS Fig Normalized to I DS(on) vs. Drain Current 3 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 100 120 I - Amperes D © 2006 IXYS All rights reserved 220 = 10V 200 8V 180 160 7V 140 120 100 3.5 4 4.5 5 5.5 0 3.1 = 10V GS 8V 2.8 7V 2.5 2 ...
... T = 125º 25º 0.4 0.6 0 Volts SD Fig. 11. Capacitance 100,000 MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 150 135 120 105 6 1.2 1.4 1.6 0 1,000 C iss 100 ...
... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFL 100N50P 1 10 ...
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