IXFM13N50 IXYS, IXFM13N50 Datasheet - Page 3

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IXFM13N50

Manufacturer Part Number
IXFM13N50
Description
MOSFET N-CH 500V 13A TO-204AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFM13N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
180W
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
13
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
179
Rthjc, Max, (ºc/w)
0.70
Package Style
TO-204
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
15.0
12.5
10.0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
7.5
5.0
2.5
0.0
25
20
15
10
5
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
J
T
J
= 25°C
= 25°C
-25
13N50
5
Case Temperature
DS(on)
5
0
T
25
I
C
vs. Drain Current
D
10
V
- Degrees C
- Amperes
DS
V
GS
50
10
- Volts
=10V
15
75
V
GS
= 10V
V
100 125 150
15
GS
20
= 15V
8V
7V
6V
5V
25
20
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
25
20
15
10
5
0
-50
-50
Fig. 2 Input Admittance
0
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
1
-25
-25
V
GS(th)
Breakdown and Threshold Voltage
of Drain to Source Resistance
2
0
0
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
50
50
- Volts
5
6
75
75
T
J
I
D
= 25°C
IXFH 13N50
IXFH 13N50
7
= 6A
100 125 150
100 125 150
BV
8
DSS
9
10
3 - 4

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