IXFX66N50Q2 IXYS, IXFX66N50Q2 Datasheet - Page 2

• Manufacturer Part Number: IXFX66N50Q2
• Description: MOSFET N-CH 500V 66A PLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX66N50Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 66A
• Vgs(th) (max) @ Id: 5.5V @ 8mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9125pF @ 25V
• Power - Max: 735W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.074 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 66 A
• Power Dissipation: 735 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 66
• Rds(on), Max, Tj=25°c, (?): 0.08
• Ciss, Typ, (pf): 9125
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 735
• Rthjc, Max, (ºc/w): 0.17
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS MOSFETs and IGBTs are covered by
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
one or moreof the following U.S. patents:
SM
RM
S
rr
d(on)
d(off)
f
r
SD
fs
RM
thJC
thCK
iss
oss
rss
g(on)
gs
gd
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
F
GS
Test Conditions
V
TO-264
= I
I
DS
F
= 0 V
S
= 25A, -di/dt = 100 A/µs, V
, V
= 10 V; I
V
V
R
V
GS
GS
GS
GS
G
= 1.0 Ω (External),
= 0 V,
= 0 V, V
= 10 V, V
= 10 V, V
D
= 0.5 • I
4,835,592
4,850,072
4,881,106
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
4,931,844
5,017,508
5,034,796
, pulse test
(T
(T
R
DSS
DSS
J
= 100 V
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
, I
, I
5,049,961
5,063,307
5,187,117
JM
D
D
= 0.5 • I
= 0.5 • I
min.
5,237,481
5,381,025
5,486,715
D25
D25
min.
Characteristic Values
30
Characteristic Values
8400
1290
typ.
0.15
typ.
310
200
10
6,162,665
6,259,123 B1
6,306,728 B1
44
32
16
60
10
47
98
1
0.17
max.
max.
264
250
1.5
66
6,404,065 B1
6,534,343
6,583,505
K/W
K/W
µC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
S
TO-264 AA Outline
PLUS 247
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
IXFK 66N50Q2
IXFX 66N50Q2
25.91
19.81
20.32
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
20.80
15.75
19.81
TM
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
5.46 BSC
6,727,585
6,759,692
Millimeter
5.45 BSC
Outline
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Min.
1.020
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.215 BSC
Min. Max.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Inches
.215 BSC
Inches
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190