IXFR66N50Q2 IXYS, IXFR66N50Q2 Datasheet

MOSFET N-CH 500V 50A ISOPLUS247

IXFR66N50Q2

Manufacturer Part Number
IXFR66N50Q2
Description
MOSFET N-CH 500V 50A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFR66N50Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9125pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.074 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
50 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
9125
Qg, Typ, (nc)
200
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
ISOPLUS247™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFR66N50Q2
Manufacturer:
SANYO
Quantity:
1 000
HiPerFET
Power MOSFET
Q2-Class
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
F
Weight
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Low intrinsic R
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
50/60 Hz, RMS, 1 minute
Mounting force
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
g
, low t
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
TM
DM
, V
GS
DSS
, I
D
DD
rr
D
D
= 3mA
= 8mA
= 33A, Note 1
≤ V
DS
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
g
J
= 125°C
JM
IXFR66N50Q2
20..120/4.5..27
500
-55 ... +150
-55 ... +150
Min.
3.0
Characteristic Values
Maximum Ratings
2500
± 30
± 40
500
500
264
500
150
300
260
Typ.
50
66
20
4
5
± 200
Max.
5.5
85 mΩ
50
2 mA
N/lb.
V/ns
V~
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
V
I
R
t
ISOPLUS247 (IXFR)
Features
• Double metal process for low gate
• International standard package
• Epoxy meet UL 94 V-0, flammability
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
G = Gate
S = Source
D25
rr
classification
resistance
DS(on)
DSS
E153432
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
=
D = Drain
500V
85mΩ Ω Ω Ω Ω
250ns
50A
Isolated Tab
DS99076A(05/08)

Related parts for IXFR66N50Q2

IXFR66N50Q2 Summary of contents

Page 1

... GS(th ± 30V GSS DSS DS DSS 10V 33A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFR66N50Q2 g Maximum Ratings 500 = 1MΩ 500 GS ± 30 ± 264 ≤ 150° 500 -55 ... +150 150 -55 ... +150 300 260 2500 20..120/4.5..27 5 Characteristic Values Min. ...

Page 2

... DSS D 10 200 , I = 33A 47 DSS D 98 0.15 Characteristic Values Min. Typ 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFR66N50Q2 Max. ISOPLUS247 (IXFR) Outline 0.25 °C/W °C/W Max 264 A 1.5 V 250 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 ...

Page 3

... C 6V 5. ° 10V 4.5V 3. Volts Value D25 D ° 125 C J ° 100 120 140 160 IXFR66N50Q2 Fig. 2. Extended Output Characteristics ° 160 V = 10V GS 140 8V 120 100 Volts D S Fig Normalized to 0.5 I DS(on ) vs. Junction Temperature 3.0 2 10V GS 2.6 2.4 2.2 2 ...

Page 4

... Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 100 IXYS reserves the right to change limits, test conditions, and dimensions 5.5 6.0 6.5 7.0 ° 0.9 1.0 1.1 1.2 1.3 C iss C oss C rss Volts IXFR66N50Q2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 250V 33A 10mA ...

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