IXTX110N20L2 IXYS, IXTX110N20L2 Datasheet - Page 3

• Manufacturer Part Number: IXTX110N20L2
• Description: MOSFET N-CH 200V 110A PLUS247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTX110N20L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4.5V @ 3mA
• Gate Charge (qg) @ Vgs: 500nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.024
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 500
• Trr, Typ, (ns): 420
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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120
100
120
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
80
60
40
20
0
0
0.0
0
0
V
20
GS
Fig. 5. R
= 10V
1
40
0.5
60
DS(on)
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
2
80
1.0
Normalized to I
100
V
Drain Current
V
GS
@ T
@ T
DS
I
V
3
D
V
= 20V
DS
120
GS
- Amperes
14V
12V
10V
- Volts
8V
J
J
1.5
- Volts
= 20V
= 25ºC
= 125ºC
12V
10V
140
4
160
D
= 55A Value vs.
2.0
180
T
J
5
= 125ºC
8V
6V
5V
4V
200
6.5V
6V
5V
4V
T
J
= 25ºC
2.5
220
6
240
3.0
260
7
120
100
280
240
200
160
120
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
80
60
40
20
80
40
0
0
-50
-50
0
V
GS
2
Fig. 4. R
-25
= 10V
-25
V
Fig. 2. Extended Output Characteristics
GS
4
Fig. 6. Maximum Drain Current vs.
= 20V
14V
12V
10V
0
0
DS(on)
6
Junction Temperature
T
Case Temperature
Normalized to I
C
T
25
25
J
- Degrees Centigrade
@ T
V
- Degrees Centigrade
8
DS
5V
4V
8V
6.5V
6V
- Volts
J
50
= 25ºC
10
50
IXTK110N20L2
IXTX110N20L2
I
12
D
75
D
75
= 110A
= 55A Value vs.
14
100
100
I
D
16
= 55A
125
125
18
150
150
20