IXFK170N20P IXYS, IXFK170N20P Datasheet - Page 3

• Manufacturer Part Number: IXFK170N20P
• Description: MOSFET N-CH 200V 170A TO-264
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFK170N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 170
• Rds(on), Max, Tj=25°c, (?): 0.014
• Ciss, Typ, (pf): 11.4
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
180
160
140
120
100
180
160
140
120
100
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
80
60
40
20
80
60
40
20
0
0
0.0
0.0
0
Fig. 5. R
V
0.2
0.5
25
GS
= 10V
0.4
1.0
50
15V
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.6
1.5
- - - -
75
0.8
2.0
vs. Drain Current
100
Normalized to I
I
D
V
V
1.0
2.5
- Amperes
DS
DS
@ 150ºC
125
@ 25ºC
- Volts
- Volts
1.2
3.0
V
V
GS
150
GS
1.4
3.5
= 15V
= 15V
10V
9V
175
10V
9V
1.6
4.0
D
= 85A Value
200
1.8
4.5
8V
7V
6V
8V
7V
6V
5V
T
T
225
J
J
2.0
5.0
= 25ºC
= 175ºC
250
2.2
5.5
275
2.4
6.0
300
270
240
210
180
150
120
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
90
80
70
60
50
40
30
20
10
90
60
30
0
0
-50
-50
0
Fig. 4. R
V
V
GS
GS
Fig. 2. Extended Output Characteristics
-25
-25
= 15V
= 10V
Fig. 6. Maximum Drain Current vs.
2
10V
External Lead Current Limit
0
DS(on)
0
vs. Junction Temperature
T
T
4
C
J
Case Temperature
- Degrees Centigrade
- Degrees Centigrade
25
25
9V
8V
7V
6V
Normalized to I
V
DS
6
50
50
@ 25ºC
- Volts
75
75
I
D
8
= 170A
IXFK170N20P
IXFX170N20P
100
100
D
= 85A Value
10
125
125
I
D
= 85A
12
150
150
175
175
14