IXTK33N50 IXYS, IXTK33N50 Datasheet - Page 4

• Manufacturer Part Number: IXTK33N50
• Description: MOSFET N-CH 500V 33A TO-264
• Manufacturer: IXYS

Specifications of IXTK33N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 4900pF @ 25V
• Power - Max: 416W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 416 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 33
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 4900
• Qg, Typ, (nc): 250
• Trr, Typ, (ns): 850
• Pd, (w): 416
• Rthjc, Max, (k/w): 0.3
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.00
0.10
0.01
100
14
12
10
80
60
40
20
Figure 9. Source Current vs. Source-to-
Drain Voltage
Figure 11. Transient Thermal Resistance
0.001
8
6
4
2
0
0
0.4
Figure 7. Gate Charge
0
50
V
Vds=300V
ds
I
I
I
I
D
D
G
G
= 300 V
=30A
=10mA
0.6
= 33 A
= 10 mA
Gate Charge - nC
T
100
J
= 125°C
V
SD
150
- Volts
0.8
T
0.01
J
= 25°C
200
1.0
250
300
1.2
Pulse Width - Seconds
0.1
Single Pulse
1 00
0. 1
1 0
4500
4000
3500
3000
2500
2000
1500
1000
1
500
Figure 10. Forward Biased SOA
0
1 0
0
Figure 8. Capacitance Curves
T
C
= 25°C
5
C
C
oss
C
iss
rss
1
V
10
V
DS
DS
- Volts
- Volts
1 00
15
IXTK 33N50
F = 1MHz
F = 1 MHz
20
500
10
25
1 ms
100 ms
10 ms
DC
4 - 4