IXFX50N50 IXYS, IXFX50N50 Datasheet - Page 4

• Manufacturer Part Number: IXFX50N50
• Description: MOSFET N-CH 500V 50A PLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX50N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 520 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
12
10
1.00
0.10
0.01
0.00
100
8
6
4
2
0
80
60
40
20
0
0
Figure 7. Gate Charge
0.2
10
Figure 9. Forward Voltage Drop of the
Figure10. Forward Bias Safe Operating Area
-4
50
V
I
DS
D
= 27.5A
100
0.4
= 250V
Gate Charge - nC
Intrinsic Diode
T
J
= 125
150
O
C
0.6
10
200
-3
T
J
= 25
250
O
C
0.8
300
350
1.0
10
Pulse Width - Seconds
-2
10000
1000
100
10
0
-1
Figure 8. Capacitance Curves
5
10
15
V
Coss
DS
Ciss
10
- Volts
20
Crss
0
25
f = 1MHz
30
IXFX 50N50
IXFX 55N50
35
40
10
1