IXFL44N60 IXYS, IXFL44N60 Datasheet
IXFL44N60
Manufacturer Part Number
IXFL44N60
Description
MOSFET N-CH 600V 41A ISOPLUS264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFL44N60.pdf
(2 pages)
Specifications of IXFL44N60
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
41A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
8900pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
ISOPLUS264™
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.13
Ciss, Typ, (pf)
8900
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
ISOPLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Preliminary data sheet
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
stg
DGR
AR
AS
D
J
J
DSS
GS
GSM
ISOL
GH(th)
d
DSS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Notes 1, 2
S
ISOL
C
C
C
C
C
C
J
J
J
GS
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
≤ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
DC
D
= 3 mA
= 8 mA
G
= I
, V
= 2 Ω
T
DS
t = 1 min
t = 1 s
= 0
GS
= 1 MΩ
DD
T
T
≤ V
J
J
(T
= 25°C
= 125°C
rr
J
DSS
= 25°C, unless otherwise specified)
JM
,
IXFL 44N60
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
600
600
176
500
150
±20
±30
41
44
60
3
8
5
-
max.
±200
100
130 mΩ
4.5
2 mA
V/ns
mJ
° C
° C
V~
V~
µA
nA
°C
°C
W
A
A
V
V
A
V
V
V
V
g
J
ISOPLUS-264
Features
Applications
Advantages
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
G = Gate
S = Source
V
I
R
t
D25
rr
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 250 ns
G
DS (on)
D
S
=
=
=
HDMOS
TM
D = Drain
600
130 mΩ Ω Ω Ω Ω
TM
41
(Backside)
process
DS99092(10/03)
A
V
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IXFL44N60 Summary of contents
Page 1
... GH(th ± GSS DSS DS DSS DS(on Notes 1, 2 © 2003 IXYS All rights reserved IXFL 44N60 rr Maximum Ratings 600 = 1 MΩ 600 GS ±20 ±30 41 176 ≤ DSS 500 -55 ... +150 150 -55 ... +150 - 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 8 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 2
... RM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ Test current I = 22A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...