IXFR55N50 IXYS, IXFR55N50 Datasheet - Page 2

• Manufacturer Part Number: IXFR55N50
• Description: MOSFET N-CH 500V 48A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFR55N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 48 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 48
• Rds(on), Max, Tj=25°c, (?): 0.08
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 417
• Rthjc, Max, (ºc/w): 0.30
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
g(on)
gd
thJC
thCK
SD
RM
gs
T
Test Conditions
Test Conditions
F
GS
DS
F
S
GS
GS
GS
G
GS
D
DS
T
DS
DS
T
T
JM
DSS
DSS
R
J
J
D
D
T
T
min.
min.
Characteristic Values
Characteristic Values
4,835,592
4,850,072
typ.
typ.
4,881,106
4,931,844
max.
max.
5,017,508
5,034,796
See IXFK55N50 data sheet for
characteristic curves.
5,049,961
5,063,307
ISOPLUS 247 OUTLINE
5,187,117
5,237,481
IXFR 50N50
IXFR 55N50
5,486,715
5,381,025
6,306,728B1