STW77N65M5 STMicroelectronics, STW77N65M5 Datasheet

MOSFET N-CH 650V 69A TO-247

STW77N65M5

Manufacturer Part Number
STW77N65M5
Description
MOSFET N-CH 650V 69A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheets

Specifications of STW77N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38 mOhm @ 34.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9800pF @ 100V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
69 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
200 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10589-5
STW77N65M5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW77N65M5
Manufacturer:
FSC
Quantity:
3 000
Part Number:
STW77N65M5
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STW77N65M5
Quantity:
1 400
Part Number:
STW77N65M5 77N65M5
Manufacturer:
ST
0
Part Number:
STW77N65M5,77N65M5,
Manufacturer:
ST
0
Features
Application
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company`s PowerMESH™ horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1.
July 2009
STW77N65M5
TO-247 worldwide best R
Higher V
Higher dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Switching applications
N-channel 650 V, 0.033 Ω, 69 A, MDmesh™ V Power MOSFET
Type
STW77N65M5
Order codes
DSS
Device summary
rating
@T
710 V
V
DSS
jMAX
R
DS(on)
< 0.038 Ω
DS(on)
77N65M5
Marking
max
Doc ID 15322 Rev 2
69 A
I
D
Figure 1.
Package
TO-247
Internal schematic diagram
STW77N65M5
TO-247
1
Packaging
2
Tube
3
TO-247
www.st.com
1/13
13

Related parts for STW77N65M5

STW77N65M5 Summary of contents

Page 1

... Power MOSFETs, making it especially suited for applications which require superior power density and outstanding efficiencies. Table 1. Device summary Order codes STW77N65M5 July 2009 max I DS(on) D < 0.038 Ω Figure 1. Marking 77N65M5 Doc ID 15322 Rev 2 STW77N65M5 TO-247 Internal schematic diagram Package Packaging TO-247 Tube TO-247 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 15322 Rev 2 STW77N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ...

Page 3

... STW77N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Max current during repetitive or single pulse avalanche I AR (pulse width limited by T Single pulse avalanche energy ...

Page 4

... D Parameter Test conditions V = 100 MHz 520 520 MHz open drain V = 520 Figure 16) (see DSS DSS Doc ID 15322 Rev 2 STW77N65M5 Min. Typ 650 =125 ° 250 µ 34.5 A 0.030 Min. Typ. 9800 - 200 6 - 590 - 1000 - 1.2 = 34.5 A, 200 - 60 70 Max. Unit V 1 µA 100 µ ...

Page 5

... STW77N65M5 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current ...

Page 6

... Figure 5. AM04965v1 (V) DS AM04969v1 R DS(on 0.041 480 400 0.036 0.031 320 240 0.026 160 0.021 0.016 80 0 0.011 150 200 Q (nC) g Doc ID 15322 Rev 2 STW77N65M5 Thermal impedance Transfer characteristics I D (A) V =2V DS 140 120 100 Static drain-source on resistance (Ω) I =34. =10V ...

Page 7

... STW77N65M5 Figure 8. Capacitance variations C (pF) 100000 10000 1000 100 Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 12. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.2 1.0 0.8 0.6 T =150°C J 0.4 0 Figure 9. AM04970v1 E oss (µ ...

Page 8

... Electrical characteristics Figure 14. Switching losses vs gate resistance (1) E (µJ) I =25A D 600 V =400V DD L=50µH 500 400 300 200 100 Eon including reverse recovery of a SiC diode 8/13 AM04973v1 Eon Eoff (Ω) G Doc ID 15322 Rev 2 STW77N65M5 ...

Page 9

... STW77N65M5 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform Figure 16. Gate charge test circuit 3.3 2200 µF µ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/13 Doc ID 15322 Rev 2 STW77N65M5 ® ...

Page 11

... STW77N65M5 Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 15322 Rev 2 Package mechanical data Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3 ...

Page 12

... Revision history 5 Revision history Table 8. Document revision history Date 20-Jan-2009 14-Jul-2009 12/13 Revision 1 First release. 2 Document status promoted from preliminary data to datasheet. Doc ID 15322 Rev 2 STW77N65M5 Changes ...

Page 13

... STW77N65M5 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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