IXFK50N50 IXYS, IXFK50N50 Datasheet
IXFK50N50
Manufacturer Part Number
IXFK50N50
Description
MOSFET N-CH 500V 50A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK50N50.pdf
(4 pages)
Specifications of IXFK50N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
625W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
560 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.1
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK50N50
Manufacturer:
IXYS
Quantity:
4 500
Company:
Part Number:
IXFK50N50
Manufacturer:
IXYS
Quantity:
200
HiPerFET
Power MOSFET
Single Die MOSFET
Symbol
(T
V
V
I
I
R
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
© 2002 IXYS All rights reserved
GSS
DM
DSS
D25
AR
JM
L
GS(th)
AR
J
stg
DSS
DS(on)
DSS
DGR
GS
GSM
D
ISOL
d
J
= 25 C, unless otherwise specified)
V
V
V
V
V
V
Note 1
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
S
ISOL
GS
DS
GS
DS
GS
GS
C
C
C
C
J
J
C
J
=25 C,
= 0 V, I
= V
= 20V; V
= V
= 0 V
= 25°C to 150°C
= 25°C to 150°C
= 25 C
= 25 C
= 25 C
= 25 C
= 10 V, I
Test Conditions
Test Conditions
I
150 C, R
DM
1 mA
GS
DSS
, di/dt 100 A/ s, V
, I
D
D
= 1mA
= 8mA
D
DS
= 0.5 • I
TM
G
= 0V
= 2
t = 1 min
t = 1 s
D25
DD
55N50
IXFK
220
55
55
V
DSS
T
T
55N50
50N50
J
J
500
500
= 25 C
= 125 C
560
60
20
30
10
5
50N50
Maximum Ratings
IXFK
300
200
50
50
0.9/6
Min.
-55 ... +150
-55 ... +150
500
N/A
N/A
N/A
2.5
Characteristic Values
IXFK 55N50
IXFK 50N50
IXFN 55N50
IXFN 50N50
55N50
150
Typ.
IXFN
220
55
55
N/A
2500
3000
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
500
500
600
30
20
30
60
200
100
4.5
25
5
80
2
Max.
200 A
50N50
50 A
50 A
IXFN
V/ns
mJ
mA
m
m
V~
V~
nA
W
C
C
C
C
V
V
V
V
V
V
A
g
V
500V
500V
500V
500V
DSS
TO-264 AA (IXFK)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Applications
Advantages
miniBLOC, SOT-227 B (IXFN)
International standard packages
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
E153432
DS (on)
55A
50A
55A
50A
I
D25
G
HDMOS
D
TAB = Drain
D
S
100m
100m
R
80m
80m
DS(on)
G
TM
= Drain
process
97502F (04/02)
S
250ns
250ns
250ns
250ns
t
D
D (TAB)
rr
S
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IXFK50N50 Summary of contents
Page 1
... I = 8mA GS(th 20V GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 © 2002 IXYS All rights reserved IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Maximum Ratings IXFK IXFK IXFN 55N50 50N50 55N50 500 500 500 500 220 200 220 ...
Page 2
... Characteristic Values Min. Typ. Max. 55 55N50 50 50N50 220 55N50 200 50N50 Note 1 1.5 250 = 100 V 1 4,835,592 4,881,106 4,850,072 4,931,844 IXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 TO-264 AA Outline Dim. Millimeter Inches n s Min. Max. Min. A 4.82 5.13 .190 A1 2.54 2.89 .100 ...
Page 3
... Degrees C - Degrees © 2002 IXYS All rights reserved 10V 100 100 120 120 100 IXF_55N50 75 75 100 125 150 100 125 150 IXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 Figure 2. Output Characteristics at 125 100 V = 10V T = 125 Volts DS Figure 4. R normalized to 0.5 DS(on) I value vs. T D25 J 2 ...
Page 4
... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10000 1000 100 250 300 350 0.8 1 Pulse Width - Seconds 4,835,592 4,881,106 4,850,072 4,931,844 IXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 Figure 8. Capacitance Curves Ciss f = 1MHz Coss Crss Volts ...