IXTT72N20 IXYS, IXTT72N20 Datasheet
IXTT72N20
Manufacturer Part Number
IXTT72N20
Description
MOSFET N-CH 200V 72A TO-268
Manufacturer
IXYS
Datasheet
1.IXTH72N20.pdf
(2 pages)
Specifications of IXTT72N20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
33 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 25V
Power - Max
400W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.033 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
72 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
72
Rds(on), Max, Tj=25°c, (?)
0.032
Ciss, Typ, (pf)
4400
Qg, Typ, (nc)
170
Trr, Typ, (ns)
200
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Current
Power MOSFET
© 2003 IXYS All rights reserved
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25 C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t
S
V
J
J
C
C
C
C
C
J
C
GS
GS
DS
GS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
, di/dt 100 A/ s, V
GS
DSS
, I
D
D
DC
D
=
=
300 s, duty cycle d
, V
= 0.5 I
G
= 2
DS
= 0
A
A
D25
GS
= 1 M
DD
T
T
J
J
V
= 125 C
= 25 C
DSS
Advance Technical Information
,
JM
2 %
IXTH 72N20
IXTT 72N20
200
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
200
200
288
400
150
300
1.5
20
30
72
72
50
5
6
4
100
Max.
4.0
25
33
1
V/ns
m
mA
mJ
nA
W
V
V
V
A
A
A
C
C
C
C
V
A
V
V
g
g
J
Features
Advantages
TO-247 AD (IXTH)
TO-268 (IXTT) Case Style
G = Gate
S = Source
V
R
I
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
D25
DSS
DS(on)
DS (on)
G
HDMOS
= 200
=
=
D = Drain
TAB = Drain
S
TM
72
33 m
process
DS99019(03/03)
V
A
(TAB)
(TAB)
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IXTT72N20 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved Advance Technical Information IXTH 72N20 IXTT 72N20 Maximum Ratings 200 = 1 M 200 288 1 DSS 400 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in Characteristic Values Min. Typ. ...
Page 2
... F -di/dt = 100 100V RM R Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test ...