IXFK100N10 IXYS, IXFK100N10 Datasheet - Page 4

• Manufacturer Part Number: IXFK100N10
• Description: MOSFET N-CH 100V 100A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK100N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 100
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 9000
• Qg, Typ, (nc): 360
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.24
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
150
125
100
0.5
0.1
12
10
75
50
25
0.001
8
6
4
2
0
0
0.00
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Source Current vs. Source
Fig.10 Transient Thermal Impedance
V
I
I
D
G
DS
= 75A
= 1mA
50
= 50V
0.25
to Drain Voltage
Gate Charge - nCoulombs
100 150 200 250 300 350 400
0.50
V
T
J
SD
= 125°C
0.75
- Volt
1.00
T
J
= 25°C
1.25
0.01
1.50
Time - Seconds
12000
10000
8000
6000
4000
2000
0
Fig.8 Capacitance Curves
0
0.1
5
10
V
DS
- Volts
15
C
IXFK 100N10
IXFN 150N10
f = 1MHz
V
C
C
iss
DS
oss
rss
= 25V
20
25
1
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