IXFL80N50Q2 IXYS, IXFL80N50Q2 Datasheet
IXFL80N50Q2
Manufacturer Part Number
IXFL80N50Q2
Description
MOSFET N-CH 500V 64A ISOPLUS264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFL80N50Q2.pdf
(2 pages)
Specifications of IXFL80N50Q2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
66 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
64A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
10500pF @ 25V
Power - Max
625W
Mounting Type
Through Hole
Package / Case
ISOPLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.066 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
66 A
Power Dissipation
380 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.066
Ciss, Typ, (pf)
12800
Qg, Typ, (nc)
250
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
380
Rthjc, Max, (ºc/w)
0.33
Package Style
ISOPLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2005 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
C
J
JM
stg
L
DGR
GS
GSM
D
ISOL
DSS
AR
AS
GS(th)
DSS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
I
Mounting force
V
Test Conditions
V
V
V
S
ISOL
V
V
Note 1
C
C
C
C
C
C
J
J
J
GS
DS
GS
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 10 V, I
≤ 1 mA
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
rr
TM
, I
D
D
D
= 1mA
= 8mA
= 40 A
G
DS
= 2 Ω
= 0
t = 1 min
t = 1 s
g
, Low Intrinsic R
GS
= 1 MΩ
DD
(T
≤ V
T
T
J
J
J
= 25°C, unless otherwise specified)
= 25°C
DSS
= 125°C
JM
IXFL 80N50Q2
G
min.
500
2.5
Characteristic Values
9-27/40-120
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
2500
3000
500
500
±30
±40
320
625
150
300
5.0
64
80
60
20
8
max.
±200 nA
100 µA
66mΩ
5.0 V
lbs / N
5 mA
V/ns
mJ
V~
V~
°C
°C
°C
°C
W
g
V
V
V
V
A
A
A
J
V
V
I
R
t
Features
Applications
Advantages
ISOPLUS-264
D25
Electrically isolated mounting tab
rr
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Pulse generation
Laser drivers
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
mounting
Space savings
High power density
DSS
DS(on)
2500 V~ Electrical isolation
PLUS 264
G
C
≤ ≤ ≤ ≤ ≤ 250 ns
= 500 V
= 64 A
= 66 mΩ Ω Ω Ω Ω
E
TM
TM
package for clip or spring
Isolated Back Surface
DS99360(03/05))
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IXFL80N50Q2 Summary of contents
Page 1
... 8mA GS(th ± GSS DSS DS DSS DS(on Note 1 © 2005 IXYS All rights reserved IXFL 80N50Q2 G Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 64 320 5.0 ≤ DSS 625 -55 ... +150 150 -55 ... +150 300 2500 3000 9-27/40-120 8 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 2
... A/µ 100 Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...