IXFK80N50P IXYS, IXFK80N50P Datasheet - Page 2

• Manufacturer Part Number: IXFK80N50P
• Description: MOSFET N-CH 500V 80A TO-264
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFK80N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 197nC @ 10V
• Input Capacitance (ciss) @ Vds: 12700pF @ 25V
• Power - Max: 1040W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 80 A
• Power Dissipation: 1040000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.065
• Ciss, Typ, (pf): 12700
• Qg, Typ, (nc): 197
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Notes:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
RM
d(on)
r
d(off)
f
rr
one or moreof the following U.S. patents:
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A, -di/dt = 100 A/µs
= 100 V, V
= 20 V; I
= 1 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
= 0 V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= 0.5 I
(T
(T
J
J
5,049,961
5,063,307
5,187,117
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
D25
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
45
Characteristic Values
Characteristic Values
1280
Typ.
Typ.
12.7
0.15
120
197
0.6
70
25
27
70
16
70
64
6,162,665
6,259,123 B1
6,306,728 B1
6
Max.
Max.
0.12 ° CW
200
200
1.5
80
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
TO-264 (IXFK) Outline
PLUS 247
6,710,463
6,683,344
6,710,405B2
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
TM
Millimeter
5.45 BSC
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
6,727,585
6,759,692
6,771,478 B2
(IXFX) Outline
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
IXFK 80N50P
IXFX 80N50P
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190