IXFG55N50 IXYS, IXFG55N50 Datasheet
IXFG55N50
Manufacturer Part Number
IXFG55N50
Description
MOSFET N-CH 500V 48A ISO264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFG55N50.pdf
(2 pages)
Specifications of IXFG55N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
ISO264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.09 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
48 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
48
Rds(on), Max, Tj=25°c, (?)
0.09
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.30
Package Style
ISO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
ISOPLUS247
(Electrically Isolated Back Surface)
Single Die MOSFET
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Md
Weight
Symbol
V
V
I
I
R
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DSS
DSS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
Mounting torque
Test Conditions
V
V
V
Note 1
S
V
V
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
GS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, Pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= V
= 0 V, I
= 10 V, I
= V
= 0 V
= 20 V, V
I
150 C, R
TM
DM
GS
, di/dt 100 A/ s, V
, I
DSS
Power MOSFETs
D
D
= 1mA
= 8mA
TM
D
= I
G
DS
= 2
T
= 0
t = 1 min
GS
= 1 M
DD
(T
T
T
J
J
J
V
= 25 C, unless otherwise specified)
DSS
= 25 C
= 125 C
JM
min.
500
2.5
Characteristic Values
IXFG 55N50
-40 ... +150
-40 ... +150
Maximum Ratings
typ.
2500
0.4/6 Nm/lb-in
500
500
220
400
150
300
20
30
48
55
60
3
5
5
max.
200 nA
90 m
25
4.5 V
2 mA
V/ns
mJ
V~
W
g
C
C
C
C
A
A
A
V
A
V
V
V
V
J
ISO264
Features
Applications
Advantages
V
I
R
G = Gate
S = Source
D25
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
DSS
DS(on)
G
TM
DS (on)
D
S
HDMOS
= 500 V
=
=
D = Drain
TM
48 A
90 m
process
DS99050(05/03)
(TAB)
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IXFG55N50 Summary of contents
Page 1
... DSS 8mA GS(th GSS DSS DS DSS DS(on Note 1 © 2003 IXYS All rights reserved IXFG 55N50 Maximum Ratings 500 = 1 M 500 220 DSS 400 -40 ... +150 150 -40 ... +150 300 2500 0.4/6 Nm/lb-in 5 Characteristic Values ( unless otherwise specified) J min. typ. max. 500 2.5 T ...
Page 2
... Note: 1. Pulse test, t 300 s, duty cycle test current 27. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. Note 1 45 9400 ...