IXTB30N100L IXYS, IXTB30N100L Datasheet
IXTB30N100L
Specifications of IXTB30N100L
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IXTB30N100L Summary of contents
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... GS(th ±30V GSS DSS DS DSS 20V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved IXTB30N100L Maximum Ratings 1000 = 1MΩ 1000 GS ±30 ± 800 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 Characteristic Values Min. Typ. 1000 3 125°C J ...
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... D DSS 165 0.13 Characteristic Values Min. Typ. = 90°C 300 C Characteristic Values Min. Typ. JM 1000 = 100V 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTB30N100L PLUS264 (IXTB) Outline TM Max 0.156 °C/W °C/W Max. W Max 120 A 1 6,404,065 B1 6,683,344 ...
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... J 3 20V GS 12V 2.6 10V 2.2 9V 1.8 8V 1.4 1.0 7V 0 15A Value vs 125º 25º IXTB30N100L Fig. 2. Extended Output Characteristics @ 20V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 20V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature ...
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... V SD Fig. 11. Capacitance 100,000 MHz 10,000 1,000 100 Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40º 25ºC J 0.8 0.9 1 1.1 - Volts C iss C oss C rss 0.001 IXTB30N100L Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 500V 15A 10mA ...
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... 25ºC C Single Pulse 0.1 10 100 V - Volts DS © 2010 IXYS CORPORATION, All Rights Reserved 100 25µs 100µs 10 1ms 10ms DC 0.1 1000 10000 IXTB30N100L Fig. 14. Forward-Bias Safe Operating Area @ T = 90º Limit DS(on 150º 25ºC C Single Pulse 10 100 V - Volts DS 25µs 100µ ...