IXFB70N60Q2 IXYS, IXFB70N60Q2 Datasheet - Page 2

MOSFET N-CH 600V 70A PLUS264

IXFB70N60Q2

Manufacturer Part Number
IXFB70N60Q2
Description
MOSFET N-CH 600V 70A PLUS264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFB70N60Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
88 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
265nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
890W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
70
Rds(on), Max, Tj=25°c, (?)
0.088
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
265
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.14
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFB70N60Q2
Manufacturer:
ST
Quantity:
9 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100 A/μs
V
F
F
GS
R
DS
GS
G
GS
GS
= 25A, V
= I
= 100 V
= 1Ω (External)
= 10V, V
= 0V
= 10V, I
= 10V, V
S
= 0V, V
, V
GS
GS
= 0V, Note 1
D
DS
DS
= 0V
DS
= 0.5 • I
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 35A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
36
Characteristic Values
Characteristic Values
1340
1.2
Typ.
6,162,665
6,259,123 B1
6,306,728 B1
8.0
265
120
Typ.
0.15
345
25
12
26
60
12
57
50
0.14 °C/W
250
280
1.5
Max.
70
Max.
6,404,065 B1
6,534,343
6,583,505
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
A
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS264
6,727,585
6,771,478 B2 7,071,537
IXFB70N60Q2
TM
(IXFB) Outline
7,005,734 B2
7,063,975 B2
7,157,338B2

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