2SK2777(TE24L,Q) Toshiba, 2SK2777(TE24L,Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK2777(TE24L,Q)
• Description: MOSFET N-CH 600V 6A TO-220SM
• Manufacturer: Toshiba

Specifications of 2SK2777(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 2-10S2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

R
V
G
DD
= 25 Ω
5
= 90 V, L = 16.8 mH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2009-09-29
2SK2777
VDSS
B
VDSS
−
V
DD
⎞
⎟
⎠